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| Eudyna GaN-HEMT 180W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm (typ.) @ P3dB High Efficiency: 50%(typ.) @ P3dB Linear Gain : 12.0dB(typ.) @ f=3.5GHz Proven Reliability ES/EGN35A180IV High Voltage - High Power GaN-HEMT DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition Tc=25oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature r P Symbol VDS IGF IGR Tch im l e Condition RG=2 RG=2 Vp VGDO P3dB d GL Rth a in Rating Limit 50 120 -5 281.25 -65 to +175 250 ry Unit V V W oC oC Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Gate-Drain Breakdown Voltage 3dB Gain Compression Power Drain Efficiency Linear Gain Thermal Resistance VDS=50V IDS=72mA IGS=- 36mA VDS=50V IDS(DC)=1000mA f=3.5GHz Channel to Case TBD -1.0 TBD Limit Typ. Max. -2.0 -350 53.0 50 12.0 0.65 -3.5 0.8 Unit V V dBm % dB oC/W Edition 1.2 Dec. 2005 1 ES/EGN35A180IV High Voltage - High Power GaN-HEMT Output Power vs. Frequency VDS=50V IDS(DC)=1000mA Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=1000mA f=3.5GHz 56 54 52 Output Power [dBm] Output Power [dBm] 50 48 46 44 42 40 38 36 3.35 3.40 3.45 3.50 3.55 3.60 3.65 56 54 52 50 48 46 44 42 40 38 36 100 90 80 70 60 Drain Effciency [%] Frequency [GHz] Pin=28dBm Pin=40dBm Pin=32dBm Pin=45dBm r P Total Power Dissipasion [W] im l e Pin=36dBm a in ry Input Power [dBm] 50 40 30 20 10 0 24 26 28 30 32 34 36 38 40 42 44 46 Power Derating Curve 300 250 200 150 100 50 0 0 50 100 150 200 o 250 300 Case Temperature [ C] Edition 1.2 Dec. 2005 2 ES/EGN35A180IV High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=1000mA, f=2 to 5 GHz, Zl = Zs = 50 ohm +50j +25j 10 25 50 +100j +10j 0 3.5GHz 3.5GHz -10j -25j -50j -100j r P +90 3.5GHz im l e S12 S21 180 6 Scale for |S21| 3.5GHz Freq [GHz] 2.0 2.1 2.2 2.3 2.4 +250j 2.5 2.6 2.7 2.8 2.9 3.0 3.1 -250j 3.2 3.3 3.4 S11 3.5 S22 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 0 4.9 5.0 ry a in S11 MAG ANG 0.368 -45.9 0.556 -106.1 0.698 -134.7 0.775 -151.5 0.812 -163.2 0.828 -172.5 0.834 179.4 0.824 171.3 0.795 162.6 0.737 153.0 0.644 143.1 0.524 134.0 0.388 126.6 0.242 125.0 0.133 148.2 0.153 -169.3 0.221 -161.9 0.254 -167.2 0.234 -175.7 0.154 -178.9 0.079 -114.2 0.265 -81.4 0.502 -94.7 0.677 -111.4 0.779 -125.4 0.833 -136.5 0.862 -144.3 0.883 -150.7 0.896 -155.9 0.902 -160.6 0.907 -164.8 S21 MAG ANG 1.763 -138.1 1.693 -165.4 1.573 173.9 1.514 157.5 1.538 143.6 1.663 129.2 1.900 113.8 2.294 95.8 2.808 73.5 3.413 46.0 3.854 14.6 3.989 -17.8 3.897 -47.9 3.700 -76.7 3.434 -103.9 3.173 -129.6 2.950 -153.3 2.820 -176.3 2.758 160.1 2.807 135.3 2.892 106.2 2.845 73.3 2.577 37.0 2.076 0.8 1.530 -32.9 1.056 -62.0 0.709 -85.8 0.480 -104.7 0.326 -120.0 0.233 -132.9 0.167 -143.4 S12 MAG ANG 0.006 165.3 0.007 138.9 0.007 122.0 0.007 108.8 0.008 95.7 0.009 80.0 0.011 70.1 0.013 54.7 0.016 33.5 0.020 7.9 0.022 -22.2 0.023 -51.6 0.022 -79.5 0.021 -107.5 0.020 -131.3 0.019 -153.6 0.018 -174.1 0.018 169.0 0.019 151.3 0.019 133.3 0.021 110.2 0.021 85.6 0.018 60.0 0.013 35.6 0.008 30.0 0.006 55.1 0.008 57.6 0.009 53.8 0.010 40.2 0.007 34.1 0.008 28.4 S22 MAG ANG 0.923 159.2 0.910 156.4 0.897 153.3 0.883 148.9 0.859 143.3 0.827 136.4 0.768 126.8 0.670 113.9 0.506 94.3 0.271 60.6 0.143 -51.4 0.353 -115.8 0.520 -141.1 0.610 -158.0 0.652 -170.0 0.667 -179.4 0.666 172.6 0.660 164.9 0.645 156.4 0.616 146.9 0.578 134.1 0.500 115.7 0.380 87.2 0.251 33.6 0.288 -41.3 0.449 -84.4 0.589 -109.6 0.683 -126.1 0.747 -138.2 0.788 -148.0 0.817 -155.3 0.6 Scale for |S 12| -90 Edition 1.2 Dec. 2005 3 ES/EGN35A180IV High Voltage - High Power GaN-HEMT IV Package Outline Metal-Ceramic Hermetic Package r P im l e ry a in PIN ASSIGNMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm Edition 1.2 Dec. 2005 4 |
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